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CHA3666
RoHS COMPLIANT
6-17GHz Low Noise Amplifier
GaAs Monolithic Microwave IC Description
The CHA3666 is a two-stage self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography.
VD1
VD2
RFin
RFout
UMS
P1 P2 N2
Main Features
Broadband performance 6-17GHz 1.8dB noise figure 26dBm 3rd order intercept point 17dBm power at 1dB compression 21dB gain Low DC power consumption
24,0 22,0 20,0 18,0 16,0 14,0 12,0 10,0 8,0 6,0 4,0 2,0 0,0 4,00 6,00 8,00 10,00 12,00 14,00 16,00 18,00
Gain
NF
Main Characteristics
Temp = +25 Vd1=Vd2= +4V Pads: P1, N2=GND C, Symbol NF G IP3 Noise figure Gain 3rd order intercept point 19 Parameter Min Typ 1.8 21 26 Max 2 Unit dB dB dBm
ESD Protections: Electrostatic discharge sensitive device observe handling precautions!
Ref. : DSCHA3666-8108 - 17 Apr 08
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Departementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA3666
Electrical Characteristics
Temp = +25 Pads: P1, N2 = GND (1) C, Symbol Fop G G NF IS11I IS22I IP3 P1dB Vd Id Parameter Operating frequency range Gain (2) Gain flatness Noise figure (2) Input return loss (2) Ouput return loss (2) 3rd order intercept point (2)
6-17GHz Low Noise Amplifier
Min 6 19
Typ 21 0.5 1.8 2.5:1 2.0:1 26
Max 17
Unit GHz dB dB
2 2.7:1 2.2:1
dB dB dB dBm dBm V
Output power at 1dB gain comp.(2) (3) Drain bias voltage Drain bias current
15
17 4
60
80
100
mA
(1) The other pads are not connected (2) These values are representative of on-wafer measurements that are made without
bonding wires at the RF ports. (3) P1dB can be increased (+0.5dBm) when P1 & P2 are connected and N2 nonconnected. In this case Id is typically 85mA
Absolute Maximum Ratings (1)
Temp = +25 C Symbol Vd Pin Top
Tj
Parameter Drain bias voltage RF input power Operating temperature range (chip backside) Junction temperature Storage temperature range
Values 4.5 10 -40 to +85
175
Unit V dBm C
C
Tstg
-55 to +125
C
(1) Operation of this device above anyone of these paramaters may cause permanent damage.
Ref. : DSCHA3666-8108 - 17 Apr 08
2/8
Specifications subject to change without notice
Route Departementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
6-17GHz Low Noise Amplifier
Bias Conditions : Vd1=Vd2= +4V Pads: P1, N2 = GND.
CHA3666
Typical Scattering Parameters (On wafer Sij measurements)
Freq GHZ 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0 6,5 7,0 7,5 8,0 8,5 9,0 9,5 10,0 10,5 11,0 11,5 12,0 12,5 13,0 13,5 14,0 14,5 15,0 15,5 16,0 16,5 17,0 17,5 18,0 18,5 19,0 19,5 20,0
dBS11 dB -0,12 -0,15 -0,21 -0,31 -0,53 -0,99 -2,07 -4,44 -8,15 -9,23 -9,21 -9,07 -8,93 -8,37 -7,99 -7,87 -7,75 -7,54 -7,50 -7,55 -7,77 -8,11 -8,53 -8,98 -9,62 -10,22 -10,60 -11,07 -11,34 -11,28 -11,14 -11,46 -10,91 -10,01 -9,02 -8,00 -7,75 -7,02 -6,59 -6,38
PhS11 -12,41 -25,18 -38,83 -54,17 -72,61 -96,30 -129,20 179,00 104,20 35,18 -2,42 -20,75 -30,17 -38,97 -47,52 -56,29 -63,59 -71,38 -79,76 -88,86 -97,01 -105,90 -114,50 -122,60 -130,10 -135,40 -143,40 -153,70 -160,80 -175,20 164,00 146,10 125,00 100,10 72,69 45,92 21,28 0,74 -18,52 -35,21
dBS12 dB -58,07 -66,93 -68,19 -70,23 -66,09 -58,45 -57,93 -53,52 -48,40 -45,69 -43,80 -42,66 -40,68 -40,46 -39,16 -38,17 -38,58 -37,51 -37,26 -36,90 -36,76 -36,05 -35,65 -35,55 -35,31 -35,13 -35,13 -34,80 -34,90 -36,47 -36,88 -37,33 -38,29 -38,86 -41,04 -42,41 -45,21 -47,61 -50,99 -45,57
PhS12 -75,30 158,40 -42,37 132,40 -174,80 112,50 51,75 -50,92 -119,10 -159,90 169,70 145,70 125,10 107,20 88,92 75,16 62,12 42,64 36,06 26,77 12,22 -1,08 -13,41 -24,05 -35,87 -50,20 -60,43 -76,43 -81,33 -95,20 -112,40 -119,70 -129,70 -155,40 -161,40 -173,60 -161,70 -177,80 -127,80 -104,20
dBS21 dB -55,39 -59,74 -55,53 -28,46 -11,74 1,55 9,78 15,92 19,62 21,13 21,84 22,14 22,22 22,22 22,19 22,23 22,19 22,08 22,03 21,97 21,93 21,90 21,88 21,86 21,82 21,75 21,72 21,74 21,73 21,84 21,64 21,52 21,68 21,60 21,15 20,44 19,26 18,39 17,14 15,75
PhS21 74,95 86,43 -2,66 25,79 2,26 -54,65 -105,90 -157,20 149,90 103,90 65,87 34,89 6,85 -17,33 -39,18 -59,70 -79,40 -97,96 -115,30 -132,00 -148,40 -164,10 -179,90 164,70 149,40 134,30 119,10 104,00 88,96 73,08 55,53 41,16 24,37 5,25 -14,81 -35,47 -51,39 -69,18 -86,07 -101,50
dBS22 dB -0,16 -0,19 -0,26 -0,62 -1,03 -2,92 -5,03 -7,10 -8,51 -9,15 -9,80 -10,53 -10,91 -11,49 -11,76 -12,47 -13,87 -15,57 -17,57 -20,19 -23,18 -25,38 -26,39 -24,69 -22,43 -20,23 -19,67 -19,22 -18,20 -17,69 -18,61 -17,96 -16,63 -14,95 -13,51 -12,40 -13,47 -11,57 -10,58 -9,99
PhS22 -11,79 -23,89 -37,09 -51,84 -68,34 -84,65 -92,78 -98,70 -98,52 -100,90 -104,20 -107,90 -113,20 -119,50 -128,70 -141,30 -154,90 -168,10 176,80 157,60 132,40 96,42 54,20 16,73 -8,28 -25,56 -36,11 -45,27 -51,93 -63,45 -77,33 -72,90 -75,48 -83,86 -102,40 -120,70 -130,90 -142,30 -160,60 -176,80
Ref. : DSCHA3666-8108 - 17 Apr 08
3/8
Specifications subject to change without notice
Route Departementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA3666
Temp = +25 C
6-17GHz Low Noise Amplifier
Typical on wafer Measured Performance
Vd1=Vd2= +4V - Pads: P1, N2 = GND - Id=80mA Typical Measurements on wafer (without bonding wires at the RF ports)
S parameters versus frequency
25 20 15 10 5 Sij (dB) 0 -5 -10 -15 -20 -25 -30 2 4 6 8 10 12 14 16 18 20 Frequency (GHz)
S21
S11
S22
NF versus frequency
6 5,5 5 4,5 Noise Figure (dB) 4 3,5 3 2,5 2 1,5 1 0,5 0 4 6 8 10 12 14 16 18 Frequency (GHz)
Ref. : DSCHA3666-8108 - 17 Apr 08
4/8
Specifications subject to change without notice
Route Departementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
6-17GHz Low Noise Amplifier
CHA3666
Output power at 1dB compression gain versus frequency
20 19,5 19 18,5 18 17,5 17 16,5 16 15,5 15 14,5 14 13,5 13 12,5 12 5
* P1=P2=grounded
Pout -1dB (dBm)
** P1=N2=grounded
* *
* typical consumption : 85mA ** typical consumption : 80mA
6
7
8
9
10
11
12
13
14
15
16
17
18
Frequency (GHz)
Ref. : DSCHA3666-8108 - 17 Apr 08
5/8
Specifications subject to change without notice
Route Departementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA3666
6-17GHz Low Noise Amplifier
C/I3 versus output power @configuration: P1_P2 grounded
60 50 40 C/I3(dB) 30 20 10
CI3 -6GHZ CI3 -12GHZ CI3 -7GHZ CI3 -14GHZ CI3 -8GHZ CI3 -16GHZ CI3 -9GHZ CI3 -17GHZ CI3 -10GHZ CI3 -18GHZ
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 Single Output power(dBm)
IP3 versus output power @configuration P1_P2 grounded
30 28 26 24
Output IP3 (dBm)
22 20 18 16 IP3_6GHz 14 12 10 1 2 3 4 5 6 7 8 9 10 11 12 13 14 IP3_12GHz IP3_7GHz IP3_14GHz IP3_8GHz IP3_16GHz IP3_9GHz IP3_17GHz IP3_10GHz IP3_18GHz
Single output power (dBm)
Ref. : DSCHA3666-8108 - 17 Apr 08
6/8
Specifications subject to change without notice
Route Departementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
6-17GHz Low Noise Amplifier
Chip Assembly and Mechanical Data
Vd1, Vd2 DC drain supply feed
CHA3666
10nF 120pF 120pF
P1
N2 P2
Note: Supply feed should be capacitively bypassed. 25m diameter gold wire is recommended.
Bonding pad position
DC Pads size: 100/100m, Chip thickness: 100m
Ref. : DSCHA3666-8108 - 17 Apr 08
7/8
Specifications subject to change without notice
Route Departementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA3666
Chip Biasing options
6-17GHz Low Noise Amplifier
This chip is self-biased, and flexibility is provided by the access to number of pads. The internal DC electrical schematic is given in order to use these pads in a safe way.
Vd1
1.5K 3.1K 40 0.3K 0.3K
Vd2
2.5
RFin
90 90 20 20 8
RFout
P1
Two standard biasing: Low Noise and low consumption:
P2
N2
Vd1=Vd2 = 4V and P1, N2 grounded. P2 pads non connected (NC). Idd = 80mA & Pout-1dB = 17dBm Typical. Vd1=Vd2 = 4V and P1, P2 grounded. N2 pads non connected (NC). Idd = 85mA & Pout-1dB = 17.5dBm Typical.
Low Noise and higher output power
Ordering Information
Chip form: CHA3666-99F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsIbility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S.
Ref. : DSCHA3666-8108 - 17 Apr 08
8/8
Specifications subject to change without notice
Route Departementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

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